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IMAGE SENSOR
CCD area image sensor
S7033/S7034 series
Back-thinned FFT-CCD
S7033/S7034 series are families of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. S7033/S7034 series feature large full-well capacity in horizontal CCD register. By using the binning operation, S7033/S7034 series can be used as a linear image sensor having a long height. This makes S7033/S7034 series ideally suited for use in spectrophotometry. The binning operation offers significant improvement in S/N and signal processing speed compared with conventional methods by which signals are digitally added by an external circuit. S7033/S7034 series have an effective pixel size of 24 x 24 m and are available in image areas ranging from 12.288 (H) x 2.928 (V) mm 2 (S7033-0907, S7034-0907S) up to a large image area of 24.576 (H) x 2.928 (V) mm2 (S7033-1007, S7034-1007S). Either one-stage or two-stage thermoelectric cooler is built into the package (S7034/S7035 series). At room temperature operation, the device can be cooled down to -10 C by one-stage cooler and -30 C by two-stage cooler respectively without using any other cooling technique. In addition since both the CCD chip and the thermoelectric cooler are hermetically sealed, no dry air is required, thus allowing easy handling.
Features
Applications
l Line, pixel binning l Greater than 90 % quantum efficiency at peak sensitivity wavelength l Wide spectral range l Wide dynamic range l MPP operation l Built-in thermoelectric cooler
s Selection guide
Type No. S7033-0907 Non-cooled S7033-1007 S7034-0907S S7034-1007S One-stage TE-cooled 1044 x 128 532 x 128 1044 x 128 Cooling Number of total pixels 532 x 128
l Fluorescence spectrometer, ICP l Industrial inspection requiring l Semiconductor inspection l DNA sequencer l Low-light-level detection
Number of active pixels 512 x 122 1024 x 122 512 x 122 1024 x 122
Active area [m m (H ) x m m (V)] 12.288 x 2.928
Suitable multichannel detector head C7043
24.576 x 2.928 12.288 x 2.928 C7044 24.576 x 2.928
Note) Two-stage TE-cooled type (S7035 series) is also available
s General ratings
Parameter Pixel size Vertical clock phase Horizontal clock phase Output circuit Package Built-in cooler Window *1 *1: Window-less is available upon request. S7033 series S7034 series 24 (H) x 24 (V) m 2 phase 2 phase One-stage MOSFET source follower 24 pin ceramic DIP (refer to dimensional outlines) One-stage Quartz glass Sapphire
1
CCD area image sensor
s A b s o lu te m a x im u m ra tin g s (T a = 2 5 C )
P a ra m e te r O p e ra tin g te m p e ra tu re S to ra g e te m p e ra tu re O D vo lta g e R D vo lta g e IS V vo lta g e IS H vo lta g e IG V vo lta g e IG H vo lta g e S G vo lta g e O G vo lta g e R G vo lta g e T G vo lta g e V e rtic a l c lo c k vo lta g e H o rizo n ta l c lo c k vo lta g e S ym b o l Topr T s tg VOD VRD V IS V V IS H V IG 1V , V IG 2V V IG 1H , V IG 2H VSG VOG VRG V TG V P 1V , V P 2V V P 1H , V P 2H M in . -5 0 -5 0 -0 .5 -0 .5 -0 .5 -0 .5 -1 0 -1 0 -1 0 -1 0 -1 0 -1 0 -1 0 -1 0
S7033/S7034 series
T yp . M a x. +30 +70 +25 +18 +18 +18 +15 +15 +15 +15 +15 +15 +15 +15 U n it C C V V V V V V V V V V V V
s O p e ra tin g c o n d itio n s (M P P m o d e , T a = 2 5 C )
P a ra m e te r O u tp u t tra n s is to r d ra in vo lta g e R e s e t d ra in vo lta g e O u tp u t g a te vo lta g e S u b s tra te vo lta g e T e s t p o in t (ve rtic a l in p u t s o u rc e ) T e s t p o in t (h o rizo n ta l in p u t s o u rc e ) T e s t p o in t (ve rtic a l in p u t g a te ) T e s t p o in t (h o rizo n ta l in p u t g a te ) H ig h V e rtic a l s h ift re g is te r c lo c k vo lta g e Low H ig h H o rizo n ta l s h ift re g is te r c lo c k vo lta g e Low H ig h S u m m in g g a te vo lta g e Low H ig h R e s e t g a te vo lta g e Low H ig h T ra n s fe r g a te vo lta g e Low S ym b o l VOD VRD VOG VSS V IS V V IS H V IG 1V , V IG 2V V IG 1H , V IG 2H V P 1V H , V P 2V H V P 1V L, V P 2V L V P 1H H , V P 2H H V P 1H L, V P 2H L VSGH VSGL VRGH VRGL V TGH V TGL M in . 18 1 1 .5 1 -8 -8 4 -9 4 -9 4 -9 4 -9 4 -9 T yp . 20 12 3 0 VRD VRD 0 0 6 -8 6 -8 6 -8 6 -8 6 -8 M a x. 22 1 2 .5 5 8 -7 8 -7 8 -7 8 -7 8 -7 U n it V V V V V V V V V V V V V
s E le c tric a l c h a ra c te ris tic s (Ta = 2 5 C )
P a ra m e te r S ym b o l M in . T yp . S ig n a l o u tp u t fre q u e n c y fc C h a rg e tra n s fe r e ffic ie n c y * 2 CTE 0 .9 9 9 9 5 0 .9 9 9 9 9 D C o u tp u t le ve l * 3 Vout 12 15 O u tp u t im p e d a n c e * 3 Zo 3 P o w e r c o n s u m p tio n * 3 * 4 P 15 *2 : C h a rg e tra n s fe r e ffic ie n c y p e r p ixe l, m e a s u re d a t h a lf o f th e fu ll w e ll c a p a c ity. *3 : T h e va lu e s d e p e n d o n th e lo a d re s is ta n c e . (Typ ic a l, V O D = 2 0 V, L o a d re s is ta n c e = 2 2 k ) *4 : P o w e r c o n s u m p tio n o f th e o n -c h ip a m p lifie r. M a x. 1 18 U n it MHz V k mW
s E le c tric a l a n d o p tic a l c h a ra c te ris tic s (Ta = 2 5 C , u n le s s o th e rw is e n o te d )
M in . V e rtic a l 1 5 0 ,0 0 0 F u ll w e ll c a p a c ity Fw H o rizo n ta l 1 ,3 5 0 ,0 0 0 C C D n o d e s e n s itivity Sv 0 .5 2 5 C D a rk c u rre n t * 5 DS (M P P m o d e ) 0 C R e a d o u t n o is e * 6 Nr L in e b in n in g 2 2 ,5 0 0 D yn a m ic ra n g e * 7 DR A re a s c a n n in g 2 ,5 0 0 P h o to re s p o n s e n o n -u n ifo rm ity * 8 PRNU S p e c tra l re s p o n s e ra n g e *5 : D a rk c u rre n t n e a rly d o u b le s fo r e ve ry 5 to 7 C in c re a s e in te m p e ra tu re . *6 : O p e ra tin g fre q u e n c y is 1 5 0 k H z. *7 : D yn a m ic ra n g e (D R )= F u ll w e ll/R e a d o u t n o is e . *8 : M e a s u re d a t th e h a lf o f th e fu ll w e ll c a p a c ity o u tp u t. P a ra m e te r S a tu ra tio n o u tp u t vo lta g e S ym b o l Vsat T yp . Fw x Sv 3 0 0 ,0 0 0 2 ,7 0 0 ,0 0 0 0 .6 4 ,0 0 0 200 30 9 0 ,0 0 0 1 0 ,0 0 0 3 2 0 0 to 1 1 0 0 M a x. 1 2 ,0 0 0 600 1 0 U n it V e
-
V /e
-
e /p ixe l/s e rm s % nm
-
Photo response non-uniformity (PRNU) [%]
Fixed pattern noise (peak to peak) Signal
x 100
2
CCD area image sensor
s Spectral response (without window) *9
100 90 (Typ. Ta=25 C) BACK-THINNED
S7033/S7034 series
s Spectral transmittance characteristics of window material
100 90 80 (Typ. Ta=25 C)
QUANTUM EFFICIENCY (%)
80 70 60 50 40 30 20 10 0 200 400 600 800 1000 1200 FRONT-SIDED (UV COAT) FRONT-SIDED
TRANSMITTANCE (%)
QUARTZ WINDOW 70 SAPPHIRE WINDOW 60 50 40 30 20 10 0 100 200 300 400 500 600 700 800 900 1000
WAVELENGTH (nm)
KMPDB0058EA
WAVELENGTH (nm)
KMPDB0101EA
*9: Spectral response with quartz glass or sapphire are decreased by the transmittance.
q Window material
Type No. S7033 series S7034 series S7035 series (two-stage TE-cooled type) *10: Resin sealing *11: Hermetic sealing Window material Quartz glass *10 (option: window-less,) Sapphire *11 (option: window-less) Sapphire *11 (option: window-less)
s Dark current vs. temperature
10000 (Typ.)
DARK CURRENT (e-/pixel/s)
1000
100
10
1
0.1 -50
-40
-30
-20
-10
0
10
20
30
TEMPERATURE (C)
KMPDB0037EB
3
CCD area image sensor
s Device structure (Conceptual drawing of top view)
S7033/S7034 series
THINNING
22
23
21
20
15
14
13
2 BEVEL
V
1
2
12
11
V=122 H=512, 1024
3
4
5
8
9
10
4 BLANK
2
n
SIGNAL OUT
4 BLANK
6 BEVEL
6 BEVEL
KMPDC0076EA
s Timing chart Line binning
INTEGRATION PERIOD (Shutter must be open) Tpwv 1 P1V P2V, TG Tpwh, Tpws P1H P2H, SG Tpwr RG OS D1 D2 S1..S512 D19 D3..D10, S1..S1024, D11..D18 D20: S703*-0907 : S703*-1007
KMPDC0128EA
VERTICAL BINNING PERIOD (Shutter must be closed) 3..126 127
READOUT PERIOD (Shutter must be closed)
2
128 122 + 6 (BEVEL) Tovr
4..530 531 4..1042 1043 3
1
2
532 : S703*-0907 1044: S703*-1007
Parameter Symbol Pulse width Tpwv P1V, P2V, TG Rise and fall time Tprv, Tpfv Pulse width Tpwh P1H, P2H Rise and fall time Tprh, Tpfh Duty ratio Pulse width Tpws SG Rise and fall time Tprs, Tpfs Duty ratio Pulse width Tpwr RG Rise and fall time Tprr, Tpfr TG - P1H Overlap time Tovr *12: Symmetrical pulses should be overlapped at 50 % of maximum amplitude. *13: In case of S7033-1007, S7034-1007S
Remark *12
2
n
24
5 4 3 2 12345
H
4 BEVEL
SIGNAL OUT
THINNING
Min. 6 *13 200 500 10 500 10 100 5 3
*12
-
-
Typ. 50 50 -
Max. -
Unit s ns ns ns % ns ns % ns ns s
4
CCD area image sensor
S7033/S7034 series
Area scanning 1: low dark current mode
INTEGRATION PERIOD (Shutter must be open) Tpwv 1 P1V P2V, TG P1H P2H, SG RG OS Tovr P2V, TG P1H Tpwh, Tpws ENLARGED VIEW 2 3 READOUT PERIOD (Shutter must be closed) 4..127 128122 + 6 (BEVEL)
P2H, SG RG OS
Tpwr
D1
D2
D3
S1..S512 D4 D18 D5..D10, S1..S1024, D11..D17
D19
D20: S703*-0907 : S703*-1007
KMPDC0129EA
Parameter Symbol Pulse width Tpwv P1V, P2V, TG Rise and fall time Tprv, Tpfv Pulse width Tpwh P1H, P2H Rise and fall time Tprh, pfh Duty ratio Pulse width Tpws SG Rise and fall time Tprs, Tpfs Duty ratio Pulse width Tpwr RG Rise and fall time Tprr, Tpfr TG - P1H Overlap time Tovr *14: Symmetrical pulses should be overlapped at 50 % of maximum amplitude. *15: In case of S7033-1007, S7034-1007S
Remark *14 *14
Min. 6 *15 200 500 10 500 10 100 5 3
-
Typ. 50 50 -
Max. -
Unit s ns ns ns % ns ns % ns ns s
Area scanning 2: large full well mode
INTEGRATION PERIOD (Shutter must be open) Tpwv 1 P1V P2V, TG P1H P2H, SG RG OS Tovr P2V, TG P1H Tpwh, Tpws ENLARGED VIEW 2 3 READOUT PERIOD (Shutter must be closed) 4..127 128122 + 6 (BEVEL)
P2H, SG RG OS
Tpwr
D1
D2
D3
S1..S512 D4 D18 D5..D10, S1..S1024, D11..D17
D19
D20: S703*-0907 : S703*-1007
KMPDC0130EA
5
CCD area image sensor
S7033/S7034 series
Min. 6 *17 200 500 10 500 10 100 5 3 Typ. 50 50 Max. Unit s ns ns ns % ns ns % ns ns s
Parameter Symbol Remark Pulse width Tpwv *16 P1V, P2V, TG Rise and fall time Tprv, Tpfv Pulse width Tpwh *16 P1H, P2H Rise and fall time Tprh, Tpfh Duty ratio Pulse width Tpws SG Rise and fall time Tprs, Tpfs Duty ratio Pulse width Tpwr RG Rise and fall time Tprr, Tpfr TG - P1H Overlap time Tovr *16: Symmetrical pulses should be overlapped at 50 % of maximum amplitude. *17: In case of S7033-1007, S7034-1007S
s Dimensional outlines (unit: mm) S7033-0907
WINDOW 16.3 ACTIVE AREA 12.288
S7033-1007
WINDOW 28.6 ACTIVE AREA 24.576
22.4
22.4
22.9
2.54 34.0
2.54 44.0
1st PIN INDICATION PAD
PHOTOSENSITIVE SURFACE
4.8 4.4 3.8
1st PIN INDICATION PAD
PHOTOSENSITIVE SURFACE
3.8 4.4
22.4
22.9
8.2
8.2
A
B
3.0
2.4
3.0
(24 x) 0.5
(24 x) 0.5
S7033-0907: A=2.928
KMPDA0080EB
S7033-1007: B=2.928
KMPDA0081EB
S7034-0907S
WINDOW 16.3 ACTIVE AREA 12.288
S7034-1007S
WINDOW 28.6 ACTIVE AREA 24.576
2.4
22.4
19.0
22.9
4.0
2.54 34.0 42.0 50.0 1st PIN INDICATION PAD PHOTOSENSITIVE SURFACE
6.7 7.3 7.7
1st PIN INDICATION PAD
44.0 52.0 60.0
2.54
PHOTOSENSITIVE SURFACE
6.7 7.3 7.7
KMPDA0083EC
TE-COOLER
3.0 1.0
4.8
TE-COOLER
3.0
(24 x) 0.5
(24 x) 0.5
S7034-1007S: B=2.928
S7034-0907S: A=2.928
KMPDA0082EC
6
1.0
4.8
4.0
19.0
8.2
22.9
8.2
A
B
4.8
CCD area image sensor
s Pin connections
Pin No. Sym bol RD OS OD OG SG P2H P1H IG2H IG1H ISH TG * 18 S7033 series Function Reset drain Output transistor source Output transistor drain Output gate Sum m ing gate Sym bol RD OS OD OG SG P2H P1H IG2H IG1H ISH TG * 15
S7033/S7034 series
Rem ark (standard operation) +12 V RL=10 k to 100 k +20 V +3 V Same pulse as P2H
1 2 3 4 5 6 7 8 CCD horizontal register clock-2 CCD horizontal register clock-2 9 CCD horizontal register clock-1 CCD horizontal register clock-1 10 Test point (horizontal input gate-2) Test point (horizontal input gate-2) 11 Test point (horizontal input gate-1) Test point (horizontal input gate-1) 12 Test point (horizontal input source) Test point (horizontal input source) 13 Transfer gate Transfer gate 14 P2V CCD vertical register clock-2 P2V CCD vertical register clock-2 15 P1V CCD vertical register clock-1 P1V CCD vertical register clock-1 16 Th1 Therm istor 17 Th2 Therm istor 18 PTE-cooler19 P+ TE-cooler+ 20 SS Substrate (GND) SS Substrate (GND) 21 ISV Test point (vertical input source) ISV Test point (vertical input source) 22 IG2V Test point (vertical input gate-2) IG2V Test point (vertical input gate-2) 23 IG1V Test point (vertical input gate-1) IG1V Test point (vertical input gate-1) 24 RG Reset gate RG Reset gate *18: Isolation gate between vertical register and horizontal register. In standard operation, TG should be applied the sam e pulse as P2V.
S7034 series Function Reset drain Output transistor source Output transistor drain Output gate Sum m ing gate
0V 0V Connect to RD Same pulse as P2V
GND Connect to RD 0V 0V
s Specifications of built-in TE-cooler (Typ.)
Param eter Internal resistance Maxim um current * 19 Sym bol Condition Rint Ta=25 C Im ax Tc * 20 =Th * 21 =25 C Vm ax Tc * 20 =Th * 21 =25 C Qm ax S7034-0907S 2.5 1.5 3.8 3.4 S7034-1007S 1.2 3.0 3.6 5.1 Unit A V W
Maxim um voltage M a xim um h eat absorption * 22 Maxim um tem perature 70 70 C of heat radiating side *19: Maxim um current Imax: If the current greater than this value flows into the therm oelectric cooler, the heat absorption begins to decrease due to the Joule heat. It should be noted that this value is not the damage threshold value. To protect the therm oelectric cooler and m aintain stable operation, the supply current should be less than 60 % of this m axim um current. *20: Tem perature of the cooling side of therm oelectric cooler *21: Tem perature of the heat radiating side of therm oelectric cooler *22: Maxim um heat absorption Qm ax. This is a theoretical heat absorption level that offsets the tem perature difference in the thermoelectric cooler when the m axim um current is supplied to the unit.
S7034-0907S
7 6 5 (Typ. Ta=25 C) VOLTAGE vs. CURRENT CCD TEMPERATURE vs. CURRENT 30 20
7 6
S7034-1007S
(Typ. Ta=25 C) VOLTAGE vs. CURRENT CCD TEMPERATURE vs. CURRENT 30 20 10 0 -10 -20 -30 -40
CCD TEMPERATURE (C)
10 0 -10 -20 -30 -40 2.0
5
4 3 2 1 0
4 3 2 1 0 0 1 2 3 4
0
0.5
1.0
1.5
CURRENT (A)
KMPDB0178EA
CURRENT (A)
KMPDB0179EA
CCD TEMPERATURE (C)
VOLTAGE (V)
VOLTAGE (V)
7
CCD area image sensor
s Specifications of built-in temperature sensor
S7033/S7034 series
A chip thermistor is built in the same package with a CCD chip, and the CCD chip temperature can be monitored with it. A relation between the thermistor resistance and absolute temperature is expressed by the following equation. R1 = R2 x expB (1 / T1 - 1 / T2) where R1 is the resistance at absolute temperature T1 (K) R2 is the resistance at absolute temperature T2 (K) B is so-called the B constant (K) The characteristics of the thermistor used are as follows. R (298K) = 10 k B (298K / 323K) = 3450 K
RESISTANCE
1 M (Typ. Ta=25 C)
100 k
10 k 220
240
260
280
300
TEMPERATURE (K)
KMPDB0111EA
s Precaution for use (Electrostatic countermeasures)
q Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist band with an earth ring, in order to prevent electrostatic damage due to electrical charges from friction. q Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge. q Provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to discharge. q Ground the tools used to handle these sensors, such as tweezers and soldering irons. It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the amount of damage that occurs.
s Element cooling/heating temperature incline rate
Element cooling/heating temperature incline rate should be set at less than 5 K/min.
Multichannel detector head C7043/C7044
Features
l C7043: for S7033 series C7044: for S7034 series l Area scanning or full line-binnng operation l Readout frequency: 250 kHz l Readout noise: 60 e-rms l T=50 C (T changes by cooling method.)
Input Symbol VD1 VA1+ VA1VA2 VD2 Vp VF ms mc Value +5 Vdc, 200 mA +15 Vdc, +100 mA -15 Vdc, -100 mA +24 Vdc, 30 mA +5 Vdc, 30 mA (C7044) +5 Vdc, 2.5 A (C7044) +12 Vdc, 100 mA (C7044) HCMOS logic compatible HCMOS logic compatible, 1 MHz
Supply voltage
Master start Master clock
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2007 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KMPD1029E09
Oct. 2007 DN
8

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